Tuning the Deoxygenation of Bulk-Dissolved Oxygen in Copper

Using synchrotron-based ambient-pressure X-ray photoelectron spectroscopy, we report the tuning of the deoxygenation process of bulk dissolved oxygen in copper via a combination of H₂ gas flow and elevated temperature. We show that a critical temperature of ∼580 °C exists for driving segregation of bulk dissolved oxygen to form chemisorbed oxygen on the Cu surface, which subsequently reacts with hydrogen to form OH species and then H₂O molecules that desorb from the surface. This deoxygenation process is tunable by a progressive stepwise increase of temperature that results in surface segregation of oxygen from deeper regions of bulk Cu. Using atomistic simulations, we show that the bulk-dissolved oxygen occupies octahedral sites of the Cu lattice and the deoxygenation process involves oxygen migration between octahedral and tetrahedral sites with a diffusion barrier of ∼0.5 eV.