Tunneling between two-dimensional electron gases

E. E. Mendez; L. L. Chang

doi:10.1016/0039-6028(90)90863-4

Tunneling between two-dimensional electron gases

E. E. Mendez
, L. L. Chang

Physics and Astronomy

IBM

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

The current-voltage characteristics of AlAs-GaAs-AlAs heterostructures under hydrostatic pressures above 8 kbar have shown sharp negative differential resistance near zero bias. This result is understood in terms of tunneling through a GaAs potential barrier between two-dimensional electron gases formed in AlAs at the X point of the Brillouin zone.

Original language	English
Pages (from-to)	173-176
Number of pages	4
Journal	Surface Science
Volume	229
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(90)90863-4
State	Published - Apr 2 1990

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title = "Tunneling between two-dimensional electron gases",

abstract = "The current-voltage characteristics of AlAs-GaAs-AlAs heterostructures under hydrostatic pressures above 8 kbar have shown sharp negative differential resistance near zero bias. This result is understood in terms of tunneling through a GaAs potential barrier between two-dimensional electron gases formed in AlAs at the X point of the Brillouin zone.",

author = "Mendez, \{E. E.\} and Chang, \{L. L.\}",

year = "1990",

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T1 - Tunneling between two-dimensional electron gases

AU - Mendez, E. E.

AU - Chang, L. L.

PY - 1990/4/2

Y1 - 1990/4/2

N2 - The current-voltage characteristics of AlAs-GaAs-AlAs heterostructures under hydrostatic pressures above 8 kbar have shown sharp negative differential resistance near zero bias. This result is understood in terms of tunneling through a GaAs potential barrier between two-dimensional electron gases formed in AlAs at the X point of the Brillouin zone.

AB - The current-voltage characteristics of AlAs-GaAs-AlAs heterostructures under hydrostatic pressures above 8 kbar have shown sharp negative differential resistance near zero bias. This result is understood in terms of tunneling through a GaAs potential barrier between two-dimensional electron gases formed in AlAs at the X point of the Brillouin zone.

UR - https://www.scopus.com/pages/publications/0000841254

U2 - 10.1016/0039-6028(90)90863-4

DO - 10.1016/0039-6028(90)90863-4

M3 - Article

AN - SCOPUS:0000841254

SN - 0039-6028

VL - 229

SP - 173

EP - 176

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

Tunneling between two-dimensional electron gases

Abstract

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