Abstract
The magnetotransport properties of two-dimensional holes in GaAsGaAlAs heterostructures are reviewed, with emphasis in the high field regime. Temperature dependence measurements of the 1 3 and 2 3 states of the fractional quantum Hall effect yield activation energies comparable to those of 2D electrons, but that are not directly correlated with low-temperature mobilities.
| Original language | English |
|---|---|
| Pages (from-to) | 561-572 |
| Number of pages | 12 |
| Journal | Surface Science |
| Volume | 170 |
| Issue number | 1-2 |
| DOIs | |
| State | Published - Apr 3 1986 |
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