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Two-stage epitaxial growth of vertically-aligned SnO2 nano-rods on (001) ceria

  • Brookhaven National Laboratory Condensed Matter Physics and Materials Science Department
  • American Superconductor Corporation

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Growth of high-aspect ratio oriented tin oxide, SnO2, nano-rods is complicated by a limited choice of matching substrates. We show that a (001) cerium oxide, CeO2, surface uniquely enables epitaxial growth of tin-oxide nano-rods via a two-stage process. First, (100) oriented nano-wires coat the ceria surface by lateral growth, forming a uniaxially-textured SnO2 deposit. Second, vertical SnO2 nano-rods nucleate on the deposit by homoepitaxy. We demonstrate growth of vertically oriented 1-2 μm long nano-rods with an average diameter of ≈ 20 nm.

Original languageEnglish
Pages (from-to)107-111
Number of pages5
JournalJournal of Crystal Growth
Volume408
DOIs
StatePublished - Dec 15 2014

Keywords

  • A1. Crystal structure
  • A3. Vapor phase epitaxy
  • B1. Cerium oxide
  • B1. Tin oxide

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