Ultra-fast laser-induced crystallization of amorphous silicon films (LPM 2001)

Taeyul Choi; David J. Hwang; Constantine P. Grigoropoulos

doi:10.1117/12.456891

Ultra-fast laser-induced crystallization of amorphous silicon films (LPM 2001)

Taeyul Choi
, David J. Hwang
, Constantine P. Grigoropoulos

Mechanical Engineering

University of California at Berkeley

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Ultra-short pulsed laser irradiation was used to crystallize an a-Si film with a laser fluence of 0.12 J/cm². The crystallization process was observed by time-resolved pump-and-probe imaging in the range of 0.2 ps to 100 ns. Reflectivity data along with post-processed SEM pictures provide evidence for a non-thermal ultra-fast solid-phase transition. A crystallization sequence based on atomic self-diffusion is suggested.

Original language	English
Pages (from-to)	100-103
Number of pages	4
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4426
DOIs	https://doi.org/10.1117/12.456891
State	Published - 2002
Event	Second International Symposium on Laser Precision Microfabrication - Singapore, Singapore Duration: May 16 2001 → May 18 2001

Keywords

Amorphous silicon
Crystallization
Femtosecond
Tin films
Ultra-fast laser

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10.1117/12.456891

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title = "Ultra-fast laser-induced crystallization of amorphous silicon films (LPM 2001)",

abstract = "Ultra-short pulsed laser irradiation was used to crystallize an a-Si film with a laser fluence of 0.12 J/cm2. The crystallization process was observed by time-resolved pump-and-probe imaging in the range of 0.2 ps to 100 ns. Reflectivity data along with post-processed SEM pictures provide evidence for a non-thermal ultra-fast solid-phase transition. A crystallization sequence based on atomic self-diffusion is suggested.",

keywords = "Amorphous silicon, Crystallization, Femtosecond, Tin films, Ultra-fast laser",

author = "Taeyul Choi and Hwang, \{David J.\} and Grigoropoulos, \{Constantine P.\}",

year = "2002",

doi = "10.1117/12.456891",

language = "English",

volume = "4426",

pages = "100--103",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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note = "Second International Symposium on Laser Precision Microfabrication ; Conference date: 16-05-2001 Through 18-05-2001",

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AU - Choi, Taeyul

AU - Hwang, David J.

AU - Grigoropoulos, Constantine P.

PY - 2002

Y1 - 2002

N2 - Ultra-short pulsed laser irradiation was used to crystallize an a-Si film with a laser fluence of 0.12 J/cm2. The crystallization process was observed by time-resolved pump-and-probe imaging in the range of 0.2 ps to 100 ns. Reflectivity data along with post-processed SEM pictures provide evidence for a non-thermal ultra-fast solid-phase transition. A crystallization sequence based on atomic self-diffusion is suggested.

AB - Ultra-short pulsed laser irradiation was used to crystallize an a-Si film with a laser fluence of 0.12 J/cm2. The crystallization process was observed by time-resolved pump-and-probe imaging in the range of 0.2 ps to 100 ns. Reflectivity data along with post-processed SEM pictures provide evidence for a non-thermal ultra-fast solid-phase transition. A crystallization sequence based on atomic self-diffusion is suggested.

KW - Amorphous silicon

KW - Crystallization

KW - Femtosecond

KW - Tin films

KW - Ultra-fast laser

UR - https://www.scopus.com/pages/publications/0036386043

U2 - 10.1117/12.456891

DO - 10.1117/12.456891

M3 - Conference article

AN - SCOPUS:0036386043

SN - 0277-786X

VL - 4426

SP - 100

EP - 103

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Second International Symposium on Laser Precision Microfabrication

Y2 - 16 May 2001 through 18 May 2001

ER -

Ultra-fast laser-induced crystallization of amorphous silicon films (LPM 2001)

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