Ultra-fast laser-induced recrystallization of amorphous silicon films

T. Choi; D. J. Hwang; M. Hatano; C. P. Grigoropoulos

Ultra-fast laser-induced recrystallization of amorphous silicon films

T. Choi
, D. J. Hwang
, M. Hatano
, C. P. Grigoropoulos

Mechanical Engineering

University of California at Berkeley

Research output: Contribution to conference › Paper › peer-review

Abstract

Pulsed laser induced recrystallization of amorphous silicon films was analyzed. It was found that the recrystallized material structure depends upon the laser fluence and the melt quench rate. The dynamics of the rapid phase transformation were probed by ultrafast pump and probe imaging and reflectivity measurement. The time delay between the main pump and the probe beams was adjusted by a precision translation stage coupled with a fiber optics assembly.

Original language	English
Pages	231-232
Number of pages	2
State	Published - 2001
Event	Conference on Lasers and Electro-Optics (CLEO) - Baltimore, MD, United States Duration: May 6 2001 → May 11 2001

Conference

Conference	Conference on Lasers and Electro-Optics (CLEO)
Country/Territory	United States
City	Baltimore, MD
Period	05/6/01 → 05/11/01

Cite this

@conference{1eaeb755bdcf44638491f3eed72b1a86,

title = "Ultra-fast laser-induced recrystallization of amorphous silicon films",

abstract = "Pulsed laser induced recrystallization of amorphous silicon films was analyzed. It was found that the recrystallized material structure depends upon the laser fluence and the melt quench rate. The dynamics of the rapid phase transformation were probed by ultrafast pump and probe imaging and reflectivity measurement. The time delay between the main pump and the probe beams was adjusted by a precision translation stage coupled with a fiber optics assembly.",

author = "T. Choi and Hwang, \{D. J.\} and M. Hatano and Grigoropoulos, \{C. P.\}",

year = "2001",

language = "English",

pages = "231--232",

note = "Conference on Lasers and Electro-Optics (CLEO) ; Conference date: 06-05-2001 Through 11-05-2001",

}

TY - CONF

T1 - Ultra-fast laser-induced recrystallization of amorphous silicon films

AU - Choi, T.

AU - Hwang, D. J.

AU - Hatano, M.

AU - Grigoropoulos, C. P.

PY - 2001

Y1 - 2001

N2 - Pulsed laser induced recrystallization of amorphous silicon films was analyzed. It was found that the recrystallized material structure depends upon the laser fluence and the melt quench rate. The dynamics of the rapid phase transformation were probed by ultrafast pump and probe imaging and reflectivity measurement. The time delay between the main pump and the probe beams was adjusted by a precision translation stage coupled with a fiber optics assembly.

AB - Pulsed laser induced recrystallization of amorphous silicon films was analyzed. It was found that the recrystallized material structure depends upon the laser fluence and the melt quench rate. The dynamics of the rapid phase transformation were probed by ultrafast pump and probe imaging and reflectivity measurement. The time delay between the main pump and the probe beams was adjusted by a precision translation stage coupled with a fiber optics assembly.

UR - https://www.scopus.com/pages/publications/0034812020

M3 - Paper

AN - SCOPUS:0034812020

SP - 231

EP - 232

T2 - Conference on Lasers and Electro-Optics (CLEO)

Y2 - 6 May 2001 through 11 May 2001

ER -

Ultra-fast laser-induced recrystallization of amorphous silicon films

Abstract

Conference

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