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Ultra-low IQFully Integrated NMOS LDO with Enhanced Load Regulation and Startup for RF Energy Harvesting Sensors

  • Stony Brook University

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

6 Scopus citations

Abstract

NMOS low-dropout (LDO) voltage regulator architecture with an ultra-low quiescent current is proposed for integration in radio-frequency (RF) energy harvesting sensors. The transient enhanced inverter (TEI) is added to conventional architecture to improve the load transient response. TEI reduces the output voltage undershoot/overshoot to 83.30 % and settling time to 28.65 % to achieve 1 % percision compared to the conventional LDO architecture. The start-up assistant RC (SARC) improves the settling time by 1.22 ms for the step input voltage to LDO. The NMOS LDO regulator with 14.76 nA quiescent current is simulated in the 180 nm CMOS technology. The line and load regulations are respectively 0.012 mV/V and 60 mV/mA with 1 pF load capacitor and maximum 1 μA load current. The PSRR is -60 dB at the low frequencies and -7.3 dB at 1 MHz.

Original languageEnglish
Title of host publication2023 IEEE 66th International Midwest Symposium on Circuits and Systems, MWSCAS 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages885-889
Number of pages5
ISBN (Electronic)9798350302103
DOIs
StatePublished - 2023
Event2023 IEEE 66th International Midwest Symposium on Circuits and Systems, MWSCAS 2023 - Tempe, United States
Duration: Aug 6 2023Aug 9 2023

Publication series

NameMidwest Symposium on Circuits and Systems
ISSN (Print)1548-3746

Conference

Conference2023 IEEE 66th International Midwest Symposium on Circuits and Systems, MWSCAS 2023
Country/TerritoryUnited States
CityTempe
Period08/6/2308/9/23

Keywords

  • backscattering system
  • NMOS LDO
  • small load current
  • start-up assistant RC
  • transient enhanced inverter
  • ultra-low quiescent current

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