Ultra-short period Ga-free superlattice growth on GaSb

W. L. Sarney; S. P. Svensson; M. K. Yakes; Y. Xu; D. Donetsky; G. Belenky

doi:10.1063/1.5029328

Ultra-short period Ga-free superlattice growth on GaSb

W. L. Sarney
, S. P. Svensson
, M. K. Yakes
, Y. Xu
, D. Donetsky
, G. Belenky

Electrical Engineering

U.S. Army Research Laboratory
Naval Research Laboratory
Stony Brook University

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

This work describes a thorough investigation of the structural properties of intended binary InAs/InSb strained layer superlattices (SLS) on GaSb substrates for infrared detection. The designed periods were as short as possible, with the InSb layers approaching one to two molecular monolayers. None of the examined growth conditions produced complete InSb layers. All samples showed a significant loss of Sb. The Sb that was incorporated was found to exhibit a spread in the growth direction, mainly due to step formation, and secondly due to forward diffusion. All structures, therefore became an InAs_1-xSb_x/InAs_1-ySb_y SLS. The intended InAs layer had a Sb composition of x ∼ 0.003-0.010 and the intended InSb layer had composition y, ranging from ∼0.24-0.43. All terrace steps appeared to be in the same direction, resulting in a weak tilt of the SLS relative to the substrate normal. We discuss the implications for growth of high-Sb-concentration InAsSb/InAs structures.

Original language	English
Article number	035304
Journal	Journal of Applied Physics
Volume	124
Issue number	3
DOIs	https://doi.org/10.1063/1.5029328
State	Published - Jul 21 2018

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title = "Ultra-short period Ga-free superlattice growth on GaSb",

abstract = "This work describes a thorough investigation of the structural properties of intended binary InAs/InSb strained layer superlattices (SLS) on GaSb substrates for infrared detection. The designed periods were as short as possible, with the InSb layers approaching one to two molecular monolayers. None of the examined growth conditions produced complete InSb layers. All samples showed a significant loss of Sb. The Sb that was incorporated was found to exhibit a spread in the growth direction, mainly due to step formation, and secondly due to forward diffusion. All structures, therefore became an InAs1-xSbx/InAs1-ySby SLS. The intended InAs layer had a Sb composition of x ∼ 0.003-0.010 and the intended InSb layer had composition y, ranging from ∼0.24-0.43. All terrace steps appeared to be in the same direction, resulting in a weak tilt of the SLS relative to the substrate normal. We discuss the implications for growth of high-Sb-concentration InAsSb/InAs structures.",

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T1 - Ultra-short period Ga-free superlattice growth on GaSb

AU - Sarney, W. L.

AU - Svensson, S. P.

AU - Yakes, M. K.

AU - Xu, Y.

AU - Donetsky, D.

AU - Belenky, G.

PY - 2018/7/21

Y1 - 2018/7/21

N2 - This work describes a thorough investigation of the structural properties of intended binary InAs/InSb strained layer superlattices (SLS) on GaSb substrates for infrared detection. The designed periods were as short as possible, with the InSb layers approaching one to two molecular monolayers. None of the examined growth conditions produced complete InSb layers. All samples showed a significant loss of Sb. The Sb that was incorporated was found to exhibit a spread in the growth direction, mainly due to step formation, and secondly due to forward diffusion. All structures, therefore became an InAs1-xSbx/InAs1-ySby SLS. The intended InAs layer had a Sb composition of x ∼ 0.003-0.010 and the intended InSb layer had composition y, ranging from ∼0.24-0.43. All terrace steps appeared to be in the same direction, resulting in a weak tilt of the SLS relative to the substrate normal. We discuss the implications for growth of high-Sb-concentration InAsSb/InAs structures.

AB - This work describes a thorough investigation of the structural properties of intended binary InAs/InSb strained layer superlattices (SLS) on GaSb substrates for infrared detection. The designed periods were as short as possible, with the InSb layers approaching one to two molecular monolayers. None of the examined growth conditions produced complete InSb layers. All samples showed a significant loss of Sb. The Sb that was incorporated was found to exhibit a spread in the growth direction, mainly due to step formation, and secondly due to forward diffusion. All structures, therefore became an InAs1-xSbx/InAs1-ySby SLS. The intended InAs layer had a Sb composition of x ∼ 0.003-0.010 and the intended InSb layer had composition y, ranging from ∼0.24-0.43. All terrace steps appeared to be in the same direction, resulting in a weak tilt of the SLS relative to the substrate normal. We discuss the implications for growth of high-Sb-concentration InAsSb/InAs structures.

UR - https://www.scopus.com/pages/publications/85050468382

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DO - 10.1063/1.5029328

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VL - 124

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

M1 - 035304

ER -

Ultra-short period Ga-free superlattice growth on GaSb

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