Ultrafast laser-induced crystallization of amorphous silicon films

Tae Y. Choi; David J. Hwang; Costas P. Grigoropoulos

doi:10.1117/1.1617312

Ultrafast laser-induced crystallization of amorphous silicon films

Tae Y. Choi
, David J. Hwang
, Costas P. Grigoropoulos

Mechanical Engineering

Swiss Federal Institute of Technology Zurich
University of California at Berkeley

Research output: Contribution to journal › Article › peer-review

86 Scopus citations

Abstract

Ultrashort pulsed laser irradiation is used to crystallize 100-nm amorphous-silicon (a-Si) films. The crystallization process is observed by time-resolved pump-and-probe reflection imaging in the range of 0.2 ps to 100 ns. The in-situ images, in conjunction with postprocessed scanning electron microscopy (SEM) and atomic force microscopy (AFM) mapping of the crystallized structure, provide evidence for nonthermal ultra-fast phase transition and subsequent surface-initiated crystallization.

Original language	English
Pages (from-to)	3383-3388
Number of pages	6
Journal	Optical Engineering
Volume	42
Issue number	11
DOIs	https://doi.org/10.1117/1.1617312
State	Published - Nov 2003

Keywords

Amorphous silicon
Crystallization
Pump and probe
Ultrafast phase transition
Ultrashort

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10.1117/1.1617312

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title = "Ultrafast laser-induced crystallization of amorphous silicon films",

abstract = "Ultrashort pulsed laser irradiation is used to crystallize 100-nm amorphous-silicon (a-Si) films. The crystallization process is observed by time-resolved pump-and-probe reflection imaging in the range of 0.2 ps to 100 ns. The in-situ images, in conjunction with postprocessed scanning electron microscopy (SEM) and atomic force microscopy (AFM) mapping of the crystallized structure, provide evidence for nonthermal ultra-fast phase transition and subsequent surface-initiated crystallization.",

keywords = "Amorphous silicon, Crystallization, Pump and probe, Ultrafast phase transition, Ultrashort",

author = "Choi, \{Tae Y.\} and Hwang, \{David J.\} and Grigoropoulos, \{Costas P.\}",

year = "2003",

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AU - Hwang, David J.

AU - Grigoropoulos, Costas P.

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N2 - Ultrashort pulsed laser irradiation is used to crystallize 100-nm amorphous-silicon (a-Si) films. The crystallization process is observed by time-resolved pump-and-probe reflection imaging in the range of 0.2 ps to 100 ns. The in-situ images, in conjunction with postprocessed scanning electron microscopy (SEM) and atomic force microscopy (AFM) mapping of the crystallized structure, provide evidence for nonthermal ultra-fast phase transition and subsequent surface-initiated crystallization.

AB - Ultrashort pulsed laser irradiation is used to crystallize 100-nm amorphous-silicon (a-Si) films. The crystallization process is observed by time-resolved pump-and-probe reflection imaging in the range of 0.2 ps to 100 ns. The in-situ images, in conjunction with postprocessed scanning electron microscopy (SEM) and atomic force microscopy (AFM) mapping of the crystallized structure, provide evidence for nonthermal ultra-fast phase transition and subsequent surface-initiated crystallization.

KW - Amorphous silicon

KW - Crystallization

KW - Pump and probe

KW - Ultrafast phase transition

KW - Ultrashort

UR - https://www.scopus.com/pages/publications/0346972518

U2 - 10.1117/1.1617312

DO - 10.1117/1.1617312

M3 - Article

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VL - 42

SP - 3383

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JO - Optical Engineering

JF - Optical Engineering

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ER -

Ultrafast laser-induced crystallization of amorphous silicon films

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Keywords

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