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Using ray tracing simulations for direct determination of burgers vectors of threading mixed dislocations in 4H-SiC c-plane wafers grown by PVT method

  • Stony Brook University
  • Wolfspeed, Inc.

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

11 Scopus citations

Abstract

The presence of threading mixed dislocations (TMDs) (with both edge and screw component) in 4H-SiC crystals grown by PVT method has been reported both from axial slices (wafers cut parallel to the growth axis) and commercial offcut wafers (cut almost perpendicular to the growth axis). In this paper, a systematic method is developed and demonstrated to unambiguously determine the Burgers vectors of TMDs in 4H-SiC commercial offcut wafers using both Synchrotron Monochromatic X-ray Topography (SMBXT) and Ray Tracing Simulations. The principle of this method is that the contrast of dislocations on different reflections varies with the relative orientation of Burgers vectors with respect to the diffraction vectors. Measurements confirm that in commercial offcut wafers the majority of the threading dislocations with screw component are mixed type dislocations.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2015
EditorsFabrizio Roccaforte, Filippo Giannazzo, Francesco La Via, Roberta Nipoti, Danilo Crippa, Mario Saggio
PublisherTrans Tech Publications Ltd
Pages15-18
Number of pages4
ISBN (Print)9783035710427
DOIs
StatePublished - 2016
Event16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 - Sicily, Italy
Duration: Oct 4 2015Oct 9 2015

Publication series

NameMaterials Science Forum
Volume858
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015
Country/TerritoryItaly
CitySicily
Period10/4/1510/9/15

Keywords

  • Bulk growth
  • Physical vapor transport
  • Ray tracing simulation
  • Silicon carbide
  • Threading dislocations
  • X-ray topography

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