Wafer Bonding and Epitaxial Transfer of GaSb-Based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices

C. A. Wang; D. A. Shiau; P. G. Murphy; P. W. O'Brien; R. K. Huang; M. K. Connors; A. C. Anderson; D. Donetsky; S. Anikeev; G. Belenky; D. M. Depoy; G. Nichols

doi:10.1007/s11664-004-0182-y

Wafer Bonding and Epitaxial Transfer of GaSb-Based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices

C. A. Wang
, D. A. Shiau
, P. G. Murphy
, P. W. O'Brien
, R. K. Huang
, M. K. Connors
, A. C. Anderson
, D. Donetsky
, S. Anikeev
, G. Belenky
, D. M. Depoy
, G. Nichols

Electrical Engineering

Massachusetts Institute of Technology
Stony Brook University
Lockheed Martin

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

GaInAsSb/AlGaAsSb/InAsSb/GaSb epitaxial layers were bonded to semi-insulating (SI) GaAs handle wafers with SiO_x/Ti/Au as the adhesion layer for monolithic interconnection of thermophotovolatic (TPV) devices. Epitaxial transfer was completed by removal of the GaSb substrate, GaSb buffer, and InAsSb etch-stop layer by selective chemical etching. The SiO_x/Ti/Au provides not only electrical isolation, but also high reflectivity and is used as an internal back-surface reflector (BSR). Characterization of wafer-bonded (WB) epitaxy by high-resolution x-ray diffraction (HRXRD) and time-decay photoluminescence (PL) indicates minimal residual stress and enhancement in optical quality. The 0.54-eV GaInAsSb cells were fabricated and monolithically interconnected in series. A ten-junction device exhibited linear voltage building with an open-circuit voltage of 1.8 V.

Original language	English
Pages (from-to)	213-217
Number of pages	5
Journal	Journal of Electronic Materials
Volume	33
Issue number	3
DOIs	https://doi.org/10.1007/s11664-004-0182-y
State	Published - Mar 2004

Keywords

Epitaxial transfer
GaSb
Monolithic interconnection
Thermophotovoltaic devices
Wafer-bonding

Access to Document

10.1007/s11664-004-0182-y

Cite this

Wang, C. A., Shiau, D. A., Murphy, P. G., O'Brien, P. W., Huang, R. K., Connors, M. K., Anderson, A. C., Donetsky, D., Anikeev, S., Belenky, G., Depoy, D. M., & Nichols, G. (2004). Wafer Bonding and Epitaxial Transfer of GaSb-Based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices. Journal of Electronic Materials, 33(3), 213-217. https://doi.org/10.1007/s11664-004-0182-y

@article{f318cdb318774327a3e69ec817508454,

title = "Wafer Bonding and Epitaxial Transfer of GaSb-Based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices",

abstract = "GaInAsSb/AlGaAsSb/InAsSb/GaSb epitaxial layers were bonded to semi-insulating (SI) GaAs handle wafers with SiOx/Ti/Au as the adhesion layer for monolithic interconnection of thermophotovolatic (TPV) devices. Epitaxial transfer was completed by removal of the GaSb substrate, GaSb buffer, and InAsSb etch-stop layer by selective chemical etching. The SiOx/Ti/Au provides not only electrical isolation, but also high reflectivity and is used as an internal back-surface reflector (BSR). Characterization of wafer-bonded (WB) epitaxy by high-resolution x-ray diffraction (HRXRD) and time-decay photoluminescence (PL) indicates minimal residual stress and enhancement in optical quality. The 0.54-eV GaInAsSb cells were fabricated and monolithically interconnected in series. A ten-junction device exhibited linear voltage building with an open-circuit voltage of 1.8 V.",

keywords = "Epitaxial transfer, GaSb, Monolithic interconnection, Thermophotovoltaic devices, Wafer-bonding",

author = "Wang, \{C. A.\} and Shiau, \{D. A.\} and Murphy, \{P. G.\} and O'Brien, \{P. W.\} and Huang, \{R. K.\} and Connors, \{M. K.\} and Anderson, \{A. C.\} and D. Donetsky and S. Anikeev and G. Belenky and Depoy, \{D. M.\} and G. Nichols",

year = "2004",

month = mar,

doi = "10.1007/s11664-004-0182-y",

language = "English",

volume = "33",

pages = "213--217",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

number = "3",

}

Wang, CA, Shiau, DA, Murphy, PG, O'Brien, PW, Huang, RK, Connors, MK, Anderson, AC, Donetsky, D, Anikeev, S, Belenky, G, Depoy, DM & Nichols, G 2004, 'Wafer Bonding and Epitaxial Transfer of GaSb-Based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices', Journal of Electronic Materials, vol. 33, no. 3, pp. 213-217. https://doi.org/10.1007/s11664-004-0182-y

TY - JOUR

T1 - Wafer Bonding and Epitaxial Transfer of GaSb-Based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices

AU - Wang, C. A.

AU - Shiau, D. A.

AU - Murphy, P. G.

AU - O'Brien, P. W.

AU - Huang, R. K.

AU - Connors, M. K.

AU - Anderson, A. C.

AU - Donetsky, D.

AU - Anikeev, S.

AU - Belenky, G.

AU - Depoy, D. M.

AU - Nichols, G.

PY - 2004/3

Y1 - 2004/3

N2 - GaInAsSb/AlGaAsSb/InAsSb/GaSb epitaxial layers were bonded to semi-insulating (SI) GaAs handle wafers with SiOx/Ti/Au as the adhesion layer for monolithic interconnection of thermophotovolatic (TPV) devices. Epitaxial transfer was completed by removal of the GaSb substrate, GaSb buffer, and InAsSb etch-stop layer by selective chemical etching. The SiOx/Ti/Au provides not only electrical isolation, but also high reflectivity and is used as an internal back-surface reflector (BSR). Characterization of wafer-bonded (WB) epitaxy by high-resolution x-ray diffraction (HRXRD) and time-decay photoluminescence (PL) indicates minimal residual stress and enhancement in optical quality. The 0.54-eV GaInAsSb cells were fabricated and monolithically interconnected in series. A ten-junction device exhibited linear voltage building with an open-circuit voltage of 1.8 V.

AB - GaInAsSb/AlGaAsSb/InAsSb/GaSb epitaxial layers were bonded to semi-insulating (SI) GaAs handle wafers with SiOx/Ti/Au as the adhesion layer for monolithic interconnection of thermophotovolatic (TPV) devices. Epitaxial transfer was completed by removal of the GaSb substrate, GaSb buffer, and InAsSb etch-stop layer by selective chemical etching. The SiOx/Ti/Au provides not only electrical isolation, but also high reflectivity and is used as an internal back-surface reflector (BSR). Characterization of wafer-bonded (WB) epitaxy by high-resolution x-ray diffraction (HRXRD) and time-decay photoluminescence (PL) indicates minimal residual stress and enhancement in optical quality. The 0.54-eV GaInAsSb cells were fabricated and monolithically interconnected in series. A ten-junction device exhibited linear voltage building with an open-circuit voltage of 1.8 V.

KW - Epitaxial transfer

KW - GaSb

KW - Monolithic interconnection

KW - Thermophotovoltaic devices

KW - Wafer-bonding

UR - https://www.scopus.com/pages/publications/12144285599

U2 - 10.1007/s11664-004-0182-y

DO - 10.1007/s11664-004-0182-y

M3 - Article

AN - SCOPUS:12144285599

SN - 0361-5235

VL - 33

SP - 213

EP - 217

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 3

ER -

Wafer Bonding and Epitaxial Transfer of GaSb-Based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this