Skip to main navigation Skip to search Skip to main content

Wavelength-tunable cascade type-I quantum-well GaSb-based diode laser at 3.2 μm

  • N. B. Chichkov
  • , A. Yadav
  • , E. Zherebtsov
  • , L. Shterengas
  • , M. Wang
  • , G. Kipshidze
  • , G. Belenky
  • , E. U. Rafailov
  • Aston University
  • Stony Brook University
  • St. Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO)

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We investigate the wavelength-tuning of cascade quantum-well GaSb-based diode lasers emitting at 3.2 μm. An external-cavity setup is used to demonstrate wavelength-tuning over a range of 250 nm with a maximum output power of 8.4 mW.

Original languageEnglish
Title of host publicationProceedings - International Conference Laser Optics 2018, ICLO 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages137
Number of pages1
ISBN (Print)9781538636121
DOIs
StatePublished - Aug 13 2018
Event2018 International Conference Laser Optics, ICLO 2018 - St. Petersburg, Russian Federation
Duration: Jun 4 2018Jun 8 2018

Publication series

NameProceedings - International Conference Laser Optics 2018, ICLO 2018

Conference

Conference2018 International Conference Laser Optics, ICLO 2018
Country/TerritoryRussian Federation
CitySt. Petersburg
Period06/4/1806/8/18

Keywords

  • Cascade quantum well lasers
  • GaSb
  • Mid-infrared
  • Quantum well lasers
  • Semiconductor lasers

Fingerprint

Dive into the research topics of 'Wavelength-tunable cascade type-I quantum-well GaSb-based diode laser at 3.2 μm'. Together they form a unique fingerprint.

Cite this