X-ray characterization of bulk AIN single crystals grown by the sublimation technique

B. Raghothamachar; M. Dudley; J. C. Rojo; K. Morgan; L. J. Schowalter

doi:10.1016/S0022-0248(02)02253-4

X-ray characterization of bulk AIN single crystals grown by the sublimation technique

B. Raghothamachar
, M. Dudley
, J. C. Rojo
, K. Morgan
, L. J. Schowalter

Materials Science and Engineering

Stony Brook University
Crystal IS, Inc.
Rensselaer Polytechnic Institute

Research output: Contribution to journal › Conference article › peer-review

69 Scopus citations

Abstract

Bulk AlN single crystal boules have been grown using the sublimation technique and several substrates have been prepared from them. Microstructural characterization of these substrates has been performed using synchrotron white beam X-ray topography (SWBXT) and high-resolution triple axis X-ray diffraction. Our study has revealed that AlN single crystal boules grown by the sublimation technique can possess a high structural quality with dislocation densities of 800-1000/cm² and rocking curves with a full-width at half-maximum of less than 10arcsec. The distribution of dislocations is inhomogeneous with large areas of the wafer free from dislocations. Inclusions are also observed (density of the order of 10⁵/cm³) and their distribution is also inhomogeneous.

Original language	English
Pages (from-to)	244-250
Number of pages	7
Journal	Journal of Crystal Growth
Volume	250
Issue number	1-2
DOIs	https://doi.org/10.1016/S0022-0248(02)02253-4
State	Published - Mar 2003
Event	ACCGE-14 - Seatle, WA, United States Duration: Aug 4 2002 → Aug 9 2002

Keywords

A1. Defects
A1. High-resolution X-ray diffraction
A1. X-ray topography
A2. Growth from vapor
A2. Single crystal growth
B1. Aluminum nitride

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10.1016/S0022-0248(02)02253-4

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@article{20684c71ae1249ee908dd543951e76ce,

title = "X-ray characterization of bulk AIN single crystals grown by the sublimation technique",

abstract = "Bulk AlN single crystal boules have been grown using the sublimation technique and several substrates have been prepared from them. Microstructural characterization of these substrates has been performed using synchrotron white beam X-ray topography (SWBXT) and high-resolution triple axis X-ray diffraction. Our study has revealed that AlN single crystal boules grown by the sublimation technique can possess a high structural quality with dislocation densities of 800-1000/cm2 and rocking curves with a full-width at half-maximum of less than 10arcsec. The distribution of dislocations is inhomogeneous with large areas of the wafer free from dislocations. Inclusions are also observed (density of the order of 105/cm3) and their distribution is also inhomogeneous.",

keywords = "A1. Defects, A1. High-resolution X-ray diffraction, A1. X-ray topography, A2. Growth from vapor, A2. Single crystal growth, B1. Aluminum nitride",

author = "B. Raghothamachar and M. Dudley and Rojo, \{J. C.\} and K. Morgan and Schowalter, \{L. J.\}",

year = "2003",

month = mar,

doi = "10.1016/S0022-0248(02)02253-4",

language = "English",

volume = "250",

pages = "244--250",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

number = "1-2",

note = "ACCGE-14 ; Conference date: 04-08-2002 Through 09-08-2002",

}

TY - JOUR

T1 - X-ray characterization of bulk AIN single crystals grown by the sublimation technique

AU - Raghothamachar, B.

AU - Dudley, M.

AU - Rojo, J. C.

AU - Morgan, K.

AU - Schowalter, L. J.

PY - 2003/3

Y1 - 2003/3

N2 - Bulk AlN single crystal boules have been grown using the sublimation technique and several substrates have been prepared from them. Microstructural characterization of these substrates has been performed using synchrotron white beam X-ray topography (SWBXT) and high-resolution triple axis X-ray diffraction. Our study has revealed that AlN single crystal boules grown by the sublimation technique can possess a high structural quality with dislocation densities of 800-1000/cm2 and rocking curves with a full-width at half-maximum of less than 10arcsec. The distribution of dislocations is inhomogeneous with large areas of the wafer free from dislocations. Inclusions are also observed (density of the order of 105/cm3) and their distribution is also inhomogeneous.

AB - Bulk AlN single crystal boules have been grown using the sublimation technique and several substrates have been prepared from them. Microstructural characterization of these substrates has been performed using synchrotron white beam X-ray topography (SWBXT) and high-resolution triple axis X-ray diffraction. Our study has revealed that AlN single crystal boules grown by the sublimation technique can possess a high structural quality with dislocation densities of 800-1000/cm2 and rocking curves with a full-width at half-maximum of less than 10arcsec. The distribution of dislocations is inhomogeneous with large areas of the wafer free from dislocations. Inclusions are also observed (density of the order of 105/cm3) and their distribution is also inhomogeneous.

KW - A1. Defects

KW - A1. High-resolution X-ray diffraction

KW - A1. X-ray topography

KW - A2. Growth from vapor

KW - A2. Single crystal growth

KW - B1. Aluminum nitride

UR - https://www.scopus.com/pages/publications/0037370250

U2 - 10.1016/S0022-0248(02)02253-4

DO - 10.1016/S0022-0248(02)02253-4

M3 - Conference article

AN - SCOPUS:0037370250

SN - 0022-0248

VL - 250

SP - 244

EP - 250

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-2

T2 - ACCGE-14

Y2 - 4 August 2002 through 9 August 2002

ER -

X-ray characterization of bulk AIN single crystals grown by the sublimation technique

Abstract

Keywords

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