X-ray diffraction measurement of doping induced lattice mismatch in n-type 4H-SiC epilayers grown on p-type substrates

Robert S. Okojie; Thomas Holzheu; Xian Rong Huang; Michael Dudley

doi:10.1063/1.1606497

X-ray diffraction measurement of doping induced lattice mismatch in n-type 4H-SiC epilayers grown on p-type substrates

Robert S. Okojie
, Thomas Holzheu
, Xian Rong Huang
, Michael Dudley

Materials Science and Engineering

NASA Glenn Research Center
CAMET Research, Inc.
Stony Brook University

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

A study on x-ray diffraction measurement of doping induced lattice mismatch in n-type 4H-SiC epilayers grown on p-type substrates is presented. It was found that in single 4H-SiC, increasing the nitrogen doping level above 4 × 10¹⁷ cm^-3 results in corresponding increase in lattice contraction. It was observed that significant lattice tilts exist in epilayers doped greater than 2 × 10¹⁹ cm^-3.

Original language	English
Pages (from-to)	1971-1973
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	10
DOIs	https://doi.org/10.1063/1.1606497
State	Published - Sep 8 2003

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@article{3e2f9aae97c5486fa3981de034c5f2f7,

title = "X-ray diffraction measurement of doping induced lattice mismatch in n-type 4H-SiC epilayers grown on p-type substrates",

abstract = "A study on x-ray diffraction measurement of doping induced lattice mismatch in n-type 4H-SiC epilayers grown on p-type substrates is presented. It was found that in single 4H-SiC, increasing the nitrogen doping level above 4 × 1017 cm-3 results in corresponding increase in lattice contraction. It was observed that significant lattice tilts exist in epilayers doped greater than 2 × 1019 cm-3.",

author = "Okojie, \{Robert S.\} and Thomas Holzheu and Huang, \{Xian Rong\} and Michael Dudley",

year = "2003",

month = sep,

day = "8",

doi = "10.1063/1.1606497",

language = "English",

volume = "83",

pages = "1971--1973",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "10",

}

TY - JOUR

T1 - X-ray diffraction measurement of doping induced lattice mismatch in n-type 4H-SiC epilayers grown on p-type substrates

AU - Okojie, Robert S.

AU - Holzheu, Thomas

AU - Huang, Xian Rong

AU - Dudley, Michael

PY - 2003/9/8

Y1 - 2003/9/8

N2 - A study on x-ray diffraction measurement of doping induced lattice mismatch in n-type 4H-SiC epilayers grown on p-type substrates is presented. It was found that in single 4H-SiC, increasing the nitrogen doping level above 4 × 1017 cm-3 results in corresponding increase in lattice contraction. It was observed that significant lattice tilts exist in epilayers doped greater than 2 × 1019 cm-3.

AB - A study on x-ray diffraction measurement of doping induced lattice mismatch in n-type 4H-SiC epilayers grown on p-type substrates is presented. It was found that in single 4H-SiC, increasing the nitrogen doping level above 4 × 1017 cm-3 results in corresponding increase in lattice contraction. It was observed that significant lattice tilts exist in epilayers doped greater than 2 × 1019 cm-3.

UR - https://www.scopus.com/pages/publications/0141919488

U2 - 10.1063/1.1606497

DO - 10.1063/1.1606497

M3 - Article

AN - SCOPUS:0141919488

SN - 0003-6951

VL - 83

SP - 1971

EP - 1973

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

X-ray diffraction measurement of doping induced lattice mismatch in n-type 4H-SiC epilayers grown on p-type substrates

Abstract

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