X-ray topographic studies of defects in PVT 6H-SiC substrates and epitaxial 6H-SiC thin films

S. Wang; M. Dudley; C. H. Carter; H. S. Kong

doi:10.1557/proc-339-735

X-ray topographic studies of defects in PVT 6H-SiC substrates and epitaxial 6H-SiC thin films

S. Wang
, M. Dudley
, C. H. Carter
, H. S. Kong

Materials Science and Engineering

State University of New York System

Research output: Contribution to journal › Conference article › peer-review

32 Scopus citations

Abstract

Synchroton white beam X-ray topography has been used to characterize defect structures in (0001) 6H-SiC substrates grown by the sublimation physical vapor transport (PVT) technique as well as in 6H-SiC epitaxial thin films grown on these substrates. Defects revealed in 6H-SiC substrates include super screw dislocations and basal plane dislocations. It has been found that back-reflection topographs are particularly suitable for imaging such super screw dislocations as well as basal plane dislocations whenever transmission topography is not applicable. Epitaxial 6H-SiC thin films grown on such (0001) substrates (tilted a few degrees towards the a-axis) were also examined by using surface sensitive grazing Bragg-Laue topography. It has been shown that super screw dislocations were replicated in the epitaxial thin films but no basal plane dislocations were revealed in the thin films. Results from various topographic techniques are discussed.

Original language	English
Pages (from-to)	735-740
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	339
DOIs	https://doi.org/10.1557/proc-339-735
State	Published - 1994
Event	Proceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 4 1994 → Apr 8 1994

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@article{deb9075084fc4c67aa78ae3029f8cb37,

title = "X-ray topographic studies of defects in PVT 6H-SiC substrates and epitaxial 6H-SiC thin films",

abstract = "Synchroton white beam X-ray topography has been used to characterize defect structures in (0001) 6H-SiC substrates grown by the sublimation physical vapor transport (PVT) technique as well as in 6H-SiC epitaxial thin films grown on these substrates. Defects revealed in 6H-SiC substrates include super screw dislocations and basal plane dislocations. It has been found that back-reflection topographs are particularly suitable for imaging such super screw dislocations as well as basal plane dislocations whenever transmission topography is not applicable. Epitaxial 6H-SiC thin films grown on such (0001) substrates (tilted a few degrees towards the a-axis) were also examined by using surface sensitive grazing Bragg-Laue topography. It has been shown that super screw dislocations were replicated in the epitaxial thin films but no basal plane dislocations were revealed in the thin films. Results from various topographic techniques are discussed.",

author = "S. Wang and M. Dudley and Carter, \{C. H.\} and Kong, \{H. S.\}",

year = "1994",

doi = "10.1557/proc-339-735",

language = "English",

volume = "339",

pages = "735--740",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Proceedings of the 1994 MRS Spring Meeting ; Conference date: 04-04-1994 Through 08-04-1994",

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TY - JOUR

T1 - X-ray topographic studies of defects in PVT 6H-SiC substrates and epitaxial 6H-SiC thin films

AU - Wang, S.

AU - Dudley, M.

AU - Carter, C. H.

AU - Kong, H. S.

PY - 1994

Y1 - 1994

N2 - Synchroton white beam X-ray topography has been used to characterize defect structures in (0001) 6H-SiC substrates grown by the sublimation physical vapor transport (PVT) technique as well as in 6H-SiC epitaxial thin films grown on these substrates. Defects revealed in 6H-SiC substrates include super screw dislocations and basal plane dislocations. It has been found that back-reflection topographs are particularly suitable for imaging such super screw dislocations as well as basal plane dislocations whenever transmission topography is not applicable. Epitaxial 6H-SiC thin films grown on such (0001) substrates (tilted a few degrees towards the a-axis) were also examined by using surface sensitive grazing Bragg-Laue topography. It has been shown that super screw dislocations were replicated in the epitaxial thin films but no basal plane dislocations were revealed in the thin films. Results from various topographic techniques are discussed.

AB - Synchroton white beam X-ray topography has been used to characterize defect structures in (0001) 6H-SiC substrates grown by the sublimation physical vapor transport (PVT) technique as well as in 6H-SiC epitaxial thin films grown on these substrates. Defects revealed in 6H-SiC substrates include super screw dislocations and basal plane dislocations. It has been found that back-reflection topographs are particularly suitable for imaging such super screw dislocations as well as basal plane dislocations whenever transmission topography is not applicable. Epitaxial 6H-SiC thin films grown on such (0001) substrates (tilted a few degrees towards the a-axis) were also examined by using surface sensitive grazing Bragg-Laue topography. It has been shown that super screw dislocations were replicated in the epitaxial thin films but no basal plane dislocations were revealed in the thin films. Results from various topographic techniques are discussed.

UR - https://www.scopus.com/pages/publications/0028741078

U2 - 10.1557/proc-339-735

DO - 10.1557/proc-339-735

M3 - Conference article

AN - SCOPUS:0028741078

SN - 0272-9172

VL - 339

SP - 735

EP - 740

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1994 MRS Spring Meeting

Y2 - 4 April 1994 through 8 April 1994

ER -

X-ray topographic studies of defects in PVT 6H-SiC substrates and epitaxial 6H-SiC thin films

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