TY - GEN
T1 - X-ray topography characterization of large diameter AlN single crystal substrates
AU - Dalmau, Rafael
AU - Britt, Jeffrey
AU - Fang, Haoyang
AU - Raghothamachar, Balaji
AU - Dudley, Michael
AU - Schlesser, Raoul
N1 - Publisher Copyright:
© 2020 Trans Tech Publications Ltd, Switzerland.
PY - 2020
Y1 - 2020
N2 - Large diameter aluminum nitride (AlN) substrates, up to 50 mm, were manufactured from single crystal boules grown by physical vapor transport (PVT). Synchrotron-based x-ray topography (XRT) was used to characterize the density, distribution, and type of dislocations. White beam topography images acquired in transmission geometry were used to analyze basal plane dislocations (BPDs) and low angle grain boundaries (LAGBs), while monochromatic beam, grazing incidence images were used to analyze threading dislocations. Boule diameter expansion, without the introduction of LAGBs around the periphery, was shown. A 48 mm substrate with a uniform threading dislocation density below 7.0 x 102 cm-2 and a BPD of 0 cm-2, the lowest dislocation densities reported to date for an AlN single crystal this size, was demonstrated.
AB - Large diameter aluminum nitride (AlN) substrates, up to 50 mm, were manufactured from single crystal boules grown by physical vapor transport (PVT). Synchrotron-based x-ray topography (XRT) was used to characterize the density, distribution, and type of dislocations. White beam topography images acquired in transmission geometry were used to analyze basal plane dislocations (BPDs) and low angle grain boundaries (LAGBs), while monochromatic beam, grazing incidence images were used to analyze threading dislocations. Boule diameter expansion, without the introduction of LAGBs around the periphery, was shown. A 48 mm substrate with a uniform threading dislocation density below 7.0 x 102 cm-2 and a BPD of 0 cm-2, the lowest dislocation densities reported to date for an AlN single crystal this size, was demonstrated.
KW - Dislocations
KW - Low angle grain boundaries
KW - Physical vapor transport
KW - Single crystal
KW - X-ray topography
UR - https://www.scopus.com/pages/publications/85089796270
U2 - 10.4028/www.scientific.net/MSF.1004.63
DO - 10.4028/www.scientific.net/MSF.1004.63
M3 - Conference contribution
AN - SCOPUS:85089796270
SN - 9783035715798
T3 - Materials Science Forum
SP - 63
EP - 68
BT - Silicon Carbide and Related Materials 2019
A2 - Yano, Hiroshi
A2 - Ohshima, Takeshi
A2 - Eto, Kazuma
A2 - Mitani, Takeshi
A2 - Harada, Shinsuke
A2 - Tanaka, Yasunori
PB - Trans Tech Publications Ltd
T2 - 18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019
Y2 - 29 September 2019 through 4 October 2019
ER -