Zinc blende GaAs films grown on wurtzite GaNsapphire templates

V. V. Chaldyshev; B. Nielsen; E. E. Mendez; Yu G. Musikhin; N. A. Bert; Zh Ma; Todd Holden

doi:10.1063/1.1875759

Zinc blende GaAs films grown on wurtzite GaNsapphire templates

V. V. Chaldyshev
, B. Nielsen
, E. E. Mendez
, Yu G. Musikhin
, N. A. Bert
, Zh Ma
, Todd Holden

Physics and Astronomy

City University of New York
Ioffe Physical Technical Institute
Stony Brook University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

1-μm-thick zinc-blende GaAs (111) films were grown by molecular-beam epitaxy on wurtzite GaNsapphire (0001) templates. In spite of a ~20% lattice mismatch, epitaxial growth was realized, so that the GaAs films showed good adhesion and their surface had a larger mirror-like area with an average surface roughness of 10 nm. Transmission electron microscopy revealed a flat and abrupt epitaxial GaAsGaN interface with some nanocavities and a large number of dislocations. Reasonably good crystalline quality of the GaAs films was confirmed by Raman characterization. Spectroscopic ellipsometry showed sharp interference fringes and characteristic parameters in the range of 0.75-5.3 eV. Photoluminescence study revealed extended band tails and dominance of non-radiative carrier recombination.

Original language	English
Article number	131916
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	13
DOIs	https://doi.org/10.1063/1.1875759
State	Published - Mar 28 2005

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title = "Zinc blende GaAs films grown on wurtzite GaNsapphire templates",

abstract = "1-μm-thick zinc-blende GaAs (111) films were grown by molecular-beam epitaxy on wurtzite GaNsapphire (0001) templates. In spite of a \textasciitilde{}20\% lattice mismatch, epitaxial growth was realized, so that the GaAs films showed good adhesion and their surface had a larger mirror-like area with an average surface roughness of 10 nm. Transmission electron microscopy revealed a flat and abrupt epitaxial GaAsGaN interface with some nanocavities and a large number of dislocations. Reasonably good crystalline quality of the GaAs films was confirmed by Raman characterization. Spectroscopic ellipsometry showed sharp interference fringes and characteristic parameters in the range of 0.75-5.3 eV. Photoluminescence study revealed extended band tails and dominance of non-radiative carrier recombination.",

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T1 - Zinc blende GaAs films grown on wurtzite GaNsapphire templates

AU - Chaldyshev, V. V.

AU - Nielsen, B.

AU - Mendez, E. E.

AU - Musikhin, Yu G.

AU - Bert, N. A.

AU - Ma, Zh

AU - Holden, Todd

PY - 2005/3/28

Y1 - 2005/3/28

N2 - 1-μm-thick zinc-blende GaAs (111) films were grown by molecular-beam epitaxy on wurtzite GaNsapphire (0001) templates. In spite of a ~20% lattice mismatch, epitaxial growth was realized, so that the GaAs films showed good adhesion and their surface had a larger mirror-like area with an average surface roughness of 10 nm. Transmission electron microscopy revealed a flat and abrupt epitaxial GaAsGaN interface with some nanocavities and a large number of dislocations. Reasonably good crystalline quality of the GaAs films was confirmed by Raman characterization. Spectroscopic ellipsometry showed sharp interference fringes and characteristic parameters in the range of 0.75-5.3 eV. Photoluminescence study revealed extended band tails and dominance of non-radiative carrier recombination.

AB - 1-μm-thick zinc-blende GaAs (111) films were grown by molecular-beam epitaxy on wurtzite GaNsapphire (0001) templates. In spite of a ~20% lattice mismatch, epitaxial growth was realized, so that the GaAs films showed good adhesion and their surface had a larger mirror-like area with an average surface roughness of 10 nm. Transmission electron microscopy revealed a flat and abrupt epitaxial GaAsGaN interface with some nanocavities and a large number of dislocations. Reasonably good crystalline quality of the GaAs films was confirmed by Raman characterization. Spectroscopic ellipsometry showed sharp interference fringes and characteristic parameters in the range of 0.75-5.3 eV. Photoluminescence study revealed extended band tails and dominance of non-radiative carrier recombination.

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DO - 10.1063/1.1875759

M3 - Article

AN - SCOPUS:17644379930

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ER -

Zinc blende GaAs films grown on wurtzite GaNsapphire templates

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